features ?high output power: p 1db = 36.5dbm (typ.) ?high gain: g 1db = 9.5db (typ.) ?high pae: add = 36% (typ.) ?low im 3 = -45dbc@po = 25.5dbm ?broad band: 5.9 ~ 7.2ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed package 1 edition 1.1 august 2004 FLM5972-4F c-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 16.0 and -2.2 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1700 2600 - 1700 - -0.5 -1.5 -3.0 -5.0 - - 8.5 9.5 - -36- 35.5 36.5 - v ds = 5v, i ds = 85ma v ds = 5v, i ds = 1100ma v ds = 5v, v gs = 0v i gs = -85 a v ds =10v, i ds = 0.65i dss (typ.), f = 5.9 ~ 7.2 ghz, z s =z l =50 ohm f = 7.2 ghz, ? f = 10 mhz 2-tone test p out = 25.5dbm s.c.l. ma ms v db % -42 -45 - dbc dbm v g m v p v gso p 1db g 1db drain current - 1100 1300 ma i dsr im 3 add gain flatness -- 0.8 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 5.0 6.0 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib 10v x i dsr x r th channel temperature rise -- 80 c ? t ch description the FLM5972-4F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLM5972-4F c-band internally matched fet output power & im 3 vs. input power v ds =10v f 1 = 7.2ghz f 2 = 7.21 ghz 2-tone test 12 16 14 18 20 22 24 input power (s.c.l.) (dbm) s.c.l.: single carrier level 25 27 29 31 33 23 21 -50 -40 -30 -20 -10 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) power derating curve 50 0 100 150 200 case temperature ( c) 24 30 18 12 6 total power dissipation (w) output power vs. frequency 38 36 37 33 34 35 32 31 6.0 5.8 6.2 6.4 6.6 6.8 7.0 7.2 pin=27dbm 21dbm 23dbm 25dbm v ds =10v p 1db frequency (ghz) output power (dbm) output power vs. input power v ds =10v f = 6.55 ghz 16 18 20 22 24 26 28 input power (dbm) 36 38 34 32 30 28 30 45 60 15 output power (dbm) add p out add (%)
3 FLM5972-4F c-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 12 | 250 scale for |s 21 | 5.8 5.8 5.8 5.8 6.0 6.0 6.0 6.0 6.2 6.2 6.2 6.2 6.4 6.4 6.4 6.4 6.6 6.6 6.6 6.6 6.8 6.8 6.8 6.8 7.0 7.0 7.0 7.2 7.2 7.2 7.2 7.4 7.4 7.4 7.4 5.7ghz 5.7ghz 5.7ghz 5.7ghz 0.1 0.2 1 2 3 4 25 50 ? 7.0 s-parameters v ds = 10v, i ds = 1100ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 5700 .648 -118.1 3.136 55.3 .038 117.9 .634 -74.1 5800 .637 -130.5 3.237 43.8 .032 98.9 .614 -83.1 5900 .625 -143.4 3.362 32.1 .029 76.0 .601 -93.0 6000 .614 -157.3 3.490 19.7 .028 46.5 .585 -103.1 6100 .600 -172.2 3.617 6.8 .027 15.1 .557 -113.7 6200 .587 172.1 3.746 -6.1 .031 -11.3 .526 -125.2 6300 .572 155.4 3.847 -20.0 .037 -36.3 .482 -138.4 6400 .558 137.6 3.939 -34.3 .046 -58.4 .438 -152.9 6500 .543 119.4 3.992 -48.8 .052 -76.8 .396 -168.3 6600 .530 100.7 4.011 -63.6 .062 -92.8 .350 175.1 6700 .518 82.1 3.980 -78.4 .069 -108.7 .306 156.9 6800 .506 64.2 3.914 -92.9 .074 -123.5 .274 136.2 6900 .495 46.6 3.828 -107.2 .080 -137.5 .253 114.7 7000 .485 30.1 3.735 -121.3 .084 -150.1 .231 95.0 7100 .478 19.6 3.672 -129.7 .087 -157.0 .223 81.0 7200 .467 3.2 3.586 -143.5 .090 -171.1 .204 61.9 7300 .458 -13.4 3.507 -157.4 .091 175.6 .181 41.4 7400 .453 -30.9 3.436 -171.7 .092 163.5 .156 18.7
4 FLM5972-4F c-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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